All MOSFET. SQ2328ES Datasheet

 

SQ2328ES Datasheet and Replacement


   Type Designator: SQ2328ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-236
 

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SQ2328ES Datasheet (PDF)

 ..1. Size:219K  vishay
 sq2328es.pdf pdf_icon

SQ2328ES

SQ2328ESwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) 100 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.300 AEC-Q101 QualifiedcID (A) 2 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/95/ECDTO-236

 9.1. Size:227K  vishay
 sq2325es.pdf pdf_icon

SQ2328ES

SQ2325ESwww.vishay.comVishay SiliconixAutomotive P-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -150 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 1.77 100 % Rg and UIS testedID (A) -0.84 Material categorization:Configuration Singlefor definitions of compliance please seewww.vishay.com/doc?99912SOT-23 (

Datasheet: SQ2308ES , SQ2309ES , SQ2310ES , SQ2315ES , SQ2318AES , SQ2318ES , SQ2319ES , SQ2325ES , IRF9640 , SQ2337ES , SQ2348ES , SQ2351ES , SQ2360EES , SQ2361EES , SQ2361ES , SQ2362ES , SQ2389ES .

History: SM6008NF | HAT2174N | AP60SL600AIN | DH045N06E | 2SK1813

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