All MOSFET. SQ2337ES Datasheet

 

SQ2337ES MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ2337ES
   Marking Code: 8Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-236

 SQ2337ES Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ2337ES Datasheet (PDF)

 ..1. Size:215K  vishay
 sq2337es.pdf

SQ2337ES SQ2337ES

SQ2337ESwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 AEC-Q101 QualifiedcRDS(on) () at VGS = - 10 V 0.290 100 % Rg and UIS TestedRDS(on) () at VGS = - 6 V 0.314 Material categorization: ID (A) - 2.2For definitions of compliance please see www.vishay.com/d

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TPC8A03-H

 

 
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