SQ2337ES Specs and Replacement

Type Designator: SQ2337ES

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO-236

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SQ2337ES datasheet

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SQ2337ES

SQ2337ES www.vishay.com Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 80 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = - 10 V 0.290 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 6 V 0.314 Material categorization ID (A) - 2.2 For definitions of compliance please see www.vishay.com/d... See More ⇒

Detailed specifications: SQ2309ES, SQ2310ES, SQ2315ES, SQ2318AES, SQ2318ES, SQ2319ES, SQ2325ES, SQ2328ES, EMB04N03H, SQ2348ES, SQ2351ES, SQ2360EES, SQ2361EES, SQ2361ES, SQ2362ES, SQ2389ES, SQ2398ES

Keywords - SQ2337ES MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.