All MOSFET. SQ2337ES Datasheet

 

SQ2337ES Datasheet and Replacement


   Type Designator: SQ2337ES
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-236
 

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SQ2337ES Datasheet (PDF)

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SQ2337ES

SQ2337ESwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 AEC-Q101 QualifiedcRDS(on) () at VGS = - 10 V 0.290 100 % Rg and UIS TestedRDS(on) () at VGS = - 6 V 0.314 Material categorization: ID (A) - 2.2For definitions of compliance please see www.vishay.com/d

Datasheet: SQ2309ES , SQ2310ES , SQ2315ES , SQ2318AES , SQ2318ES , SQ2319ES , SQ2325ES , SQ2328ES , 2SK3918 , SQ2348ES , SQ2351ES , SQ2360EES , SQ2361EES , SQ2361ES , SQ2362ES , SQ2389ES , SQ2398ES .

History: NVMFS5113PL | APT47N60BCFG | AUIRFBA1405 | SSM3K335R | CS50N06P | HAT2028RJ | NCV8408

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