All MOSFET. SQ2348ES Datasheet

 

SQ2348ES Datasheet and Replacement


   Type Designator: SQ2348ES
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO-236
 

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SQ2348ES Datasheet (PDF)

 ..1. Size:256K  vishay
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SQ2348ES

SQ2348ESwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 AEC-Q101 qualified cRDS(on) () at VGS = 10 V 0.024 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.032 Material categorization:ID (A) 8for definitions of compliance please see Configuration Singleww

 0.1. Size:1450K  cn vbsemi
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SQ2348ES

SQ2348ES-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Datasheet: SQ2310ES , SQ2315ES , SQ2318AES , SQ2318ES , SQ2319ES , SQ2325ES , SQ2328ES , SQ2337ES , MMD60R360PRH , SQ2351ES , SQ2360EES , SQ2361EES , SQ2361ES , SQ2362ES , SQ2389ES , SQ2398ES , SQ3410EV .

History: CSD23381F4 | SI7923DN | SSM3K56CT | IXTJ3N150 | AUIRFP4227 | FQD3N60TM | VBZE04N03

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