SQ3426EV MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ3426EV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TSOP-6
SQ3426EV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ3426EV Datasheet (PDF)
sq3426ev.pdf
SQ3426EVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.042 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.063 Material categorization: ID (A) 7for definitions of compliance please see Configuration Singlewww.vish
sq3426eev.pdf
SQ3426EEVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.042 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.063 Typical ESD Protection 800 VID (A) 7 AEC-Q101 QualifiedConfiguration Single 100 % Rg and U
sq3426aeev.pdf
SQ3426AEEVwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 Typical ESD protection 800 V HBMRDS(on) () at VGS = 10 V 0.042 AEC-Q101 qualifiedRDS(on) () at VGS = 4.5 V 0.063 100 % Rg and UIS testedID (A) 7 Material categorization: Configuration Singlefor definit
sq3427ev.pdf
SQ3427EVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.095 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.135 Material categorization:ID (A) -5.3for definitions of compliance please see Configuration Sing
sq3427aeev.pdf
SQ3427AEEVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualified cRDS(on) () at VGS = -10 V 0.095 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.135 Typical ESD protection 800 VID (A) -5.3Configuration Single Material categorization:for
sq3425ev.pdf
SQ3425EVwww.vishay.comVishay SiliconixAutomotive P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -20 AEC-Q101 qualified cRDS(on) () at VGS = -4.5 V 0.060 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.100 Material categorization:ID (A) -7.4for definitions of compliance please seeConfiguration Singlew
sq3427eev.pdf
SQ3427EEVwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.082 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.115 AEC-Q101 QualifiedcID (A) - 5.5 100 % Rg and UIS TestedConfiguration Single Typica
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
