SQ3456EV Specs and Replacement
Type Designator: SQ3456EV
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TSOP-6
SQ3456EV substitution
- MOSFET ⓘ Cross-Reference Search
SQ3456EV datasheet
sq3456ev.pdf
SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 10 V 0.035 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.052 Material categorization ID (A) 8 For definitions of compliance please see Configuration Single www.vis... See More ⇒
sq3456bev.pdf
SQ3456BEV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 AEC-Q101 Qualifiedc RDS(on) ( ) at VGS = 10 V 0.035 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.052 Material categorization ID (A) 7.8 For definitions of compliance please see Configuration Single www.... See More ⇒
sq3457ev.pdf
SQ3457EV www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 30 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.065 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.100 100 % Rg and UIS Tested ID (A) - 6.8 Compliant to RoHS Directive 2002/... See More ⇒
Detailed specifications: SQ3418EV, SQ3419EEV, SQ3426EEV, SQ3426EV, SQ3427EEV, SQ3427EV, SQ3442EV, SQ3456BEV, IRF640, SQ3457EV, SQ3460EV, SQ3469EV, SQ3481EV, SQ3985EV, SQ4182EY, SQ4184EY, SQ4282EY
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