SQ3985EV
MOSFET. Datasheet pdf. Equivalent
Type Designator: SQ3985EV
Marking Code: 8T
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 3.9
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 3.1
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145
Ohm
Package:
TSOP-6
SQ3985EV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQ3985EV
Datasheet (PDF)
..1. Size:230K vishay
sq3985ev.pdf
SQ3985EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -20 AEC-Q101 qualifiedRDS(on) () at VGS = -4.5 V 0.145 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.200 Material categorization: RDS(on) () at VGS = -1.8 V 0.300for definitions of compliance please s
9.1. Size:221K vishay
sq3987ev.pdf
SQ3987EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please seewww.vishay.com/doc?999123G22S2S21S1G1Top ViewMarking code: 8XG2G1PRODUC
9.2. Size:226K vishay
sq3989ev.pdf
SQ3989EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see www.vishay.com/doc?999123G22S1 S2S21G1Top ViewMarking Code: 9BG1 G2PRODUCT SU
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