All MOSFET. SQ3985EV Datasheet

 

SQ3985EV Datasheet and Replacement


   Type Designator: SQ3985EV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TSOP-6
 

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SQ3985EV Datasheet (PDF)

 ..1. Size:230K  vishay
 sq3985ev.pdf pdf_icon

SQ3985EV

SQ3985EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -20 AEC-Q101 qualifiedRDS(on) () at VGS = -4.5 V 0.145 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.200 Material categorization: RDS(on) () at VGS = -1.8 V 0.300for definitions of compliance please s

 9.1. Size:221K  vishay
 sq3987ev.pdf pdf_icon

SQ3985EV

SQ3987EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please seewww.vishay.com/doc?999123G22S2S21S1G1Top ViewMarking code: 8XG2G1PRODUC

 9.2. Size:226K  vishay
 sq3989ev.pdf pdf_icon

SQ3985EV

SQ3989EVwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESTSOP-6 DualD2 TrenchFET power MOSFET4S1 AEC-Q101 qualified5D1 100 % Rg and UIS tested6 Material categorization: for definitions of compliance please see www.vishay.com/doc?999123G22S1 S2S21G1Top ViewMarking Code: 9BG1 G2PRODUCT SU

Datasheet: SQ3427EV , SQ3442EV , SQ3456BEV , SQ3456EV , SQ3457EV , SQ3460EV , SQ3469EV , SQ3481EV , 10N60 , SQ4182EY , SQ4184EY , SQ4282EY , SQ4284EY , SQ4330EY , SQ4401DY , SQ4401EY , SQ4410EY .

History: 2SK3127B | 12P10G-TM3-T | RJK0451DPB | RU1HE12L | SED3030M | 1N65L-AA3-R | AONY36356

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