All MOSFET. SQ4410EY Datasheet

 

SQ4410EY MOSFET. Datasheet pdf. Equivalent

Type Designator: SQ4410EY

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 35 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 460 pF

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: SO-8

SQ4410EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4410EY Datasheet (PDF)

0.1. sq4410ey.pdf Size:252K _vishay

SQ4410EY
SQ4410EY

SQ4410EYwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.012 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.020 Material categorization:ID (A) 15For definitions of compliance please see Configuration Singlewww

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