All MOSFET. SQ4953EY Datasheet

 

SQ4953EY Datasheet and Replacement


   Type Designator: SQ4953EY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO-8
 

 SQ4953EY substitution

   - MOSFET ⓘ Cross-Reference Search

 

SQ4953EY Datasheet (PDF)

 ..1. Size:250K  vishay
 sq4953ey.pdf pdf_icon

SQ4953EY

SQ4953EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifiedcRDS(on) () at VGS = - 10 V 0.045 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.085 Material categorization:ID (A) per leg - 6.6For definitions of compliance please see Co

Datasheet: SQ4917EY , SQ4920EY , SQ4936EY , SQ4937EY , SQ4940EY , SQ4942EY , SQ4946AEY , SQ4949EY , SKD502T , SQ4961EY , SQ7002K , SQ7414AEN , SQ7414AENW , SQ7414EN , SQ7415AEN , SQ7415AENW , SQ7415EN .

History: OSG65R069HSZF | OSG65R130PT3ZF | OSG65R041HT3ZF

Keywords - SQ4953EY MOSFET datasheet

 SQ4953EY cross reference
 SQ4953EY equivalent finder
 SQ4953EY lookup
 SQ4953EY substitution
 SQ4953EY replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.