All MOSFET. SQ4953EY Datasheet

 

SQ4953EY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQ4953EY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO-8

 SQ4953EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQ4953EY Datasheet (PDF)

 ..1. Size:250K  vishay
 sq4953ey.pdf

SQ4953EY SQ4953EY

SQ4953EYwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifiedcRDS(on) () at VGS = - 10 V 0.045 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.085 Material categorization:ID (A) per leg - 6.6For definitions of compliance please see Co

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: US6U37 | STW46NF30

 

 
Back to Top