SQD15N06-42L Specs and Replacement

Type Designator: SQD15N06-42L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO-252

SQD15N06-42L substitution

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SQD15N06-42L datasheet

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SQD15N06-42L

SQD15N06-42L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARYd TrenchFET Power MOSFET VDS (V) 60 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.042 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.060 Package with Low Thermal Resistance ID (A) 15 Material categorization Configuration Single ... See More ⇒

Detailed specifications: SQ9945BEY, SQA410EJ, SQD07N25-350H, SQD100N03-3M2L, SQD100N03-3M4, SQD100N04-3M6, SQD100N04-3M6L, SQD10N30-330H, 4N60, SQD19P06-60L, SQD23N06-31L, SQD25N06-22L, SQD25N15-52, SQD30N05-20L, SQD35N05-26L, SQD40N04-10A, SQD40N06-14L

Keywords - SQD15N06-42L MOSFET specs

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