All MOSFET. SQD15N06-42L Datasheet

 

SQD15N06-42L Datasheet and Replacement


   Type Designator: SQD15N06-42L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-252
 

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SQD15N06-42L Datasheet (PDF)

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SQD15N06-42L

SQD15N06-42Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARYd TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.042 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.060 Package with Low Thermal ResistanceID (A) 15 Material categorization: Configuration Single

Datasheet: SQ9945BEY , SQA410EJ , SQD07N25-350H , SQD100N03-3M2L , SQD100N03-3M4 , SQD100N04-3M6 , SQD100N04-3M6L , SQD10N30-330H , 4N60 , SQD19P06-60L , SQD23N06-31L , SQD25N06-22L , SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L .

History: SQD100N04-3M6

Keywords - SQD15N06-42L MOSFET datasheet

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