All MOSFET. SQD50N02-04L Datasheet

 

SQD50N02-04L Datasheet and Replacement


   Type Designator: SQD50N02-04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1437 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO-252
 

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SQD50N02-04L Datasheet (PDF)

 ..1. Size:110K  vishay
sqd50n02-04l.pdf pdf_icon

SQD50N02-04L

SQD50N02-04Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 20 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0043 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.006 100 % Rg and UIS TestedID (A) 50 Material categorization:Configuration Single

 7.1. Size:105K  vishay
sqd50n03-4m0l.pdf pdf_icon

SQD50N02-04L

SQD50N03-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0031 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0040 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Single

 7.2. Size:166K  vishay
sqd50n04-09h.pdf pdf_icon

SQD50N02-04L

SQD50N04-09Hwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETID (A) 50 Package with Low Thermal ResistanceConfiguration Single 100 % Rg and UIS TestedD AEC-Q101 QualifieddTO-252

 7.3. Size:171K  vishay
sqd50n03-06p.pdf pdf_icon

SQD50N02-04L

SQD50N03-06Pwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0060 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0085 Material categorization:ID (A) 50For definitions of compliance please see Configuration Singl

Datasheet: SQD25N15-52 , SQD30N05-20L , SQD35N05-26L , SQD40N04-10A , SQD40N06-14L , SQD40N10-25 , SQD40P10-40L , SQD45P03-12 , IRFB31N20D , SQD50N03-06P , SQD50N03-09 , SQD50N03-4M0L , SQD50N04-09H , SQD50N04-3M5L , SQD50N04-4M1 , SQD50N04-4M5L , SQD50N04-5M0 .

History: ZXMN10A11KTC

Keywords - SQD50N02-04L MOSFET datasheet

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 SQD50N02-04L replacement

 

 
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