SQD50N02-04L Specs and Replacement

Type Designator: SQD50N02-04L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 1437 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO-252

SQD50N02-04L substitution

- MOSFET ⓘ Cross-Reference Search

 

SQD50N02-04L datasheet

 ..1. Size:110K  vishay
sqd50n02-04l.pdf pdf_icon

SQD50N02-04L

SQD50N02-04L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 20 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0043 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.006 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single ... See More ⇒

 7.1. Size:105K  vishay
sqd50n03-4m0l.pdf pdf_icon

SQD50N02-04L

SQD50N03-4m0L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0031 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 4.5 V 0.0040 Material categorization ID (A) 50 For definitions of compliance please see Configuration Single ... See More ⇒

 7.2. Size:166K  vishay
sqd50n04-09h.pdf pdf_icon

SQD50N02-04L

SQD50N04-09H www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET ID (A) 50 Package with Low Thermal Resistance Configuration Single 100 % Rg and UIS Tested D AEC-Q101 Qualifiedd TO-252 ... See More ⇒

 7.3. Size:171K  vishay
sqd50n03-06p.pdf pdf_icon

SQD50N02-04L

SQD50N03-06P www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.0060 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0085 Material categorization ID (A) 50 For definitions of compliance please see Configuration Singl... See More ⇒

Detailed specifications: SQD25N15-52, SQD30N05-20L, SQD35N05-26L, SQD40N04-10A, SQD40N06-14L, SQD40N10-25, SQD40P10-40L, SQD45P03-12, IRF2807, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L, SQD50N04-5M0

Keywords - SQD50N02-04L MOSFET specs

 SQD50N02-04L cross reference

 SQD50N02-04L equivalent finder

 SQD50N02-04L pdf lookup

 SQD50N02-04L substitution

 SQD50N02-04L replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.