SQD50N04-4M1 Datasheet. Specs and Replacement

Type Designator: SQD50N04-4M1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: TO-252

SQD50N04-4M1 substitution

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SQD50N04-4M1 datasheet

 ..1. Size:170K  vishay
 sqd50n04-4m1.pdf pdf_icon

SQD50N04-4M1

SQD50N04-4m1 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0041 AEC-Q101 Qualifiedd ID (A) 50 100 % Rg and UIS Tested Configuration Single Material categorization For definitions of compliance please s... See More ⇒

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 sqd50n04-4m5l.pdf pdf_icon

SQD50N04-4M1

SQD50N04-4m5L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0035 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.0042 100 % Rg and UIS Tested ID (A) 50 Material categorization Configuration Single... See More ⇒

 5.1. Size:166K  vishay
 sqd50n04-09h.pdf pdf_icon

SQD50N04-4M1

SQD50N04-09H www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET ID (A) 50 Package with Low Thermal Resistance Configuration Single 100 % Rg and UIS Tested D AEC-Q101 Qualifiedd TO-252 ... See More ⇒

 5.2. Size:158K  vishay
 sqd50n04-5m6.pdf pdf_icon

SQD50N04-4M1

SQD50N04-5m6 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0056 AEC-Q101 Qualified ID (A) 50 100 % Rg and UIS Tested Material categorization Configuration Single For definitions of compliance please se... See More ⇒

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Detailed specifications: SQD40P10-40L, SQD45P03-12, SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, 75N75, SQD50N04-4M5L, SQD50N04-5M0, SQD50N04-5M6, SQD50N05-11L, SQD50N06-07L, SQD50N06-09L, SQD50N10-8M9L, SQD50N30-4M0L

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