IXTH10N90 Datasheet and Replacement
Type Designator: IXTH10N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 315 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO247
IXTH10N90 substitution
IXTH10N90 Datasheet (PDF)
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf

VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -
Datasheet: IXFX48N50Q , IXFX50N50 , IXFX55N50 , IXFX90N20Q , IXFX90N30 , IXTA1N100 , IXTA2N80 , IXTH10N100 , RU6888R , IXTH10P50 , IXTH11N80 , IXTH11P50 , IXTH12N100 , IXTH12N45MA , IXTH12N45MB , IXTH12N50A , IXTH12N50MA .
History: RU7H2K
Keywords - IXTH10N90 MOSFET datasheet
IXTH10N90 cross reference
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IXTH10N90 lookup
IXTH10N90 substitution
IXTH10N90 replacement
History: RU7H2K



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