All MOSFET. IXTH10N90 Datasheet

 

IXTH10N90 Datasheet and Replacement


   Type Designator: IXTH10N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 145 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO247
 

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IXTH10N90 Datasheet (PDF)

 ..1. Size:299K  ixys
 ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf pdf_icon

IXTH10N90

 7.1. Size:105K  ixys
 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTH10N90

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 7.2. Size:64K  ixys
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IXTH10N90

 8.1. Size:124K  ixys
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IXTH10N90

VDSS ID25 RDS(on)Standard Power MOSFETP-Channel Enhancement ModeIXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche RatedIXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 V(TAB)VGSM Transient 30 VDID25 TC = 25C 10P50 -10 A11P50 -

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Keywords - IXTH10N90 MOSFET datasheet

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