All MOSFET. SQD50N30-4M0L Datasheet

 

SQD50N30-4M0L Datasheet and Replacement


   Type Designator: SQD50N30-4M0L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 921 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-252
 

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SQD50N30-4M0L Datasheet (PDF)

 ..1. Size:168K  vishay
sqd50n30-4m0l.pdf pdf_icon

SQD50N30-4M0L

SQD50N03-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0031 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0040 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Single

 8.1. Size:105K  vishay
sqd50n03-4m0l.pdf pdf_icon

SQD50N30-4M0L

SQD50N03-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0031 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0040 Material categorization:ID (A) 50For definitions of compliance please seeConfiguration Single

 8.2. Size:166K  vishay
sqd50n04-09h.pdf pdf_icon

SQD50N30-4M0L

SQD50N04-09Hwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.009 TrenchFET Power MOSFETID (A) 50 Package with Low Thermal ResistanceConfiguration Single 100 % Rg and UIS TestedD AEC-Q101 QualifieddTO-252

 8.3. Size:171K  vishay
sqd50n03-06p.pdf pdf_icon

SQD50N30-4M0L

SQD50N03-06Pwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0060 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.0085 Material categorization:ID (A) 50For definitions of compliance please see Configuration Singl

Datasheet: SQD50N04-4M1 , SQD50N04-4M5L , SQD50N04-5M0 , SQD50N04-5M6 , SQD50N05-11L , SQD50N06-07L , SQD50N06-09L , SQD50N10-8M9L , IRF1405 , SQD50P03-07 , SQD50P04-09L , SQD50P04-13L , SQD50P06-15L , SQD50P08-25L , SQD50P08-28 , SQD90P04-9M4L , SQD97N06-6M3L .

History: ZXMN10A11KTC

Keywords - SQD50N30-4M0L MOSFET datasheet

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 SQD50N30-4M0L equivalent finder
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 SQD50N30-4M0L replacement

 

 
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