SQD50P04-13L Datasheet. Specs and Replacement

Type Designator: SQD50P04-13L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 508 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO-252

SQD50P04-13L substitution

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SQD50P04-13L datasheet

 ..1. Size:167K  vishay
sqd50p04-13l.pdf pdf_icon

SQD50P04-13L

SQD50P04-13L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.013 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.022 Package with Low Thermal Resistance ID (A) - 50 100 % Rg and UIS Tested Configuration ... See More ⇒

 5.1. Size:169K  vishay
sqd50p04-09l.pdf pdf_icon

SQD50P04-13L

SQD50P04-09L www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.0094 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.0190 Package with Low Thermal Resistance ID (A) - 50 100 % Rg and UIS Tested Configuratio... See More ⇒

 7.1. Size:163K  vishay
sqd50p06-15l.pdf pdf_icon

SQD50P04-13L

SQD50P06-15L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = - 10 V 0.0155 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.0200 AEC-Q101 Qualified ID (A) - 50 Material categorization Configuration... See More ⇒

 7.2. Size:177K  vishay
sqd50p08-25l.pdf pdf_icon

SQD50P04-13L

SQD50P08-25L www.vishay.com Vishay Siliconix Automotive P-Channel 80 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 80 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 4.5 V 0.031 Material categorization ID (A) - 50 For definitions of compliance please see Configuratio... See More ⇒

Detailed specifications: SQD50N04-5M6, SQD50N05-11L, SQD50N06-07L, SQD50N06-09L, SQD50N10-8M9L, SQD50N30-4M0L, SQD50P03-07, SQD50P04-09L, IRFB7545, SQD50P06-15L, SQD50P08-25L, SQD50P08-28, SQD90P04-9M4L, SQD97N06-6M3L, SQJ401EP, SQJ402EP, SQJ403EEP

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