All MOSFET. SQJ443EP Datasheet

 

SQJ443EP Datasheet and Replacement


   Type Designator: SQJ443EP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: POWERPAK-SO-8L
 

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SQJ443EP Datasheet (PDF)

 ..1. Size:173K  vishay
 sqj443ep.pdf pdf_icon

SQJ443EP

SQJ443EPwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.029 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.047 AEC-Q101 QualifieddID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant t

 9.1. Size:217K  vishay
 sqj446ep.pdf pdf_icon

SQJ443EP

SQJ446EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 AEC-Q101 qualified cRDS(on) () at VGS = 10 V 0.0050 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0075 Material categorization: ID (A) 60for definitions of compliance please see Configuration Singlewww

Datasheet: SQJ401EP , SQJ402EP , SQJ403EEP , SQJ403EP , SQJ410EP , SQJ412EP , SQJ422EP , SQJ431EP , IRF740 , SQJ456EP , SQJ460AEP , SQJ460EP , SQJ461EP , SQJ463EP , SQJ465EP , SQJ469EP , SQJ486EP .

History: IXTN110N20L2 | IXTH40N50L2

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