SQJ456EP Datasheet. Specs and Replacement
Type Designator: SQJ456EP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 292 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: POWERPAK-SO-8L
SQJ456EP substitution
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SQJ456EP datasheet
sqj456ep.pdf
SQJ456EP www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition RDS(on) ( ) at VGS = 10 V 0.026 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 6 V 0.030 AEC-Q101 Qualifiedd ID (A) 32 100 % Rg and UIS Tested Configuration Single Compliant to RoHS ... See More ⇒
sqj457ep.pdf
SQJ457EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -60 AEC-Q101 qualified RDS(on) ( ) at VGS = -10 V 0.0250 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.0350 Material categorization ID (A) -36 for definitions of compliance please see Configuration Singl... See More ⇒
sqj454ep.pdf
SQJ454EP www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES PowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested D Material categorization for definitions of compliance please see 1 www.vishay.com/doc?99912 S 2 S 3 D S 4 1 G Top View Bottom View PRODUCT SUMMARY VDS (V) 200 G... See More ⇒
Detailed specifications: SQJ402EP, SQJ403EEP, SQJ403EP, SQJ410EP, SQJ412EP, SQJ422EP, SQJ431EP, SQJ443EP, IRF840, SQJ460AEP, SQJ460EP, SQJ461EP, SQJ463EP, SQJ465EP, SQJ469EP, SQJ486EP, SQJ488EP
Keywords - SQJ456EP MOSFET specs
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History: SQJ460EP
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