All MOSFET. SQJ456EP Datasheet

 

SQJ456EP Datasheet and Replacement


   Type Designator: SQJ456EP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 292 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: POWERPAK-SO-8L
      - MOSFET Cross-Reference Search

 

SQJ456EP Datasheet (PDF)

 ..1. Size:153K  vishay
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SQJ456EP

SQJ456EPwww.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) () at VGS = 10 V 0.026 TrenchFET Power MOSFETRDS(on) () at VGS = 6 V 0.030 AEC-Q101 QualifieddID (A) 32 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS

 9.1. Size:206K  vishay
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SQJ456EP

SQJ457EPwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -60 AEC-Q101 qualifiedRDS(on) () at VGS = -10 V 0.0250 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.0350 Material categorization:ID (A) -36for definitions of compliance please see Configuration Singl

 9.2. Size:296K  vishay
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SQJ456EP

SQJ454EPwww.vishay.comVishay SiliconixAutomotive N-Channel 200 V (D-S) 175 C MOSFETFEATURESPowerPAK SO-8L Single TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS testedD Material categorization:for definitions of compliance please see 1www.vishay.com/doc?99912S2S3DS41 GTop View Bottom ViewPRODUCT SUMMARYVDS (V) 200G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | ALD1103DB | SFFX054Z

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