SQJ850EP Specs and Replacement
Type Designator: SQJ850EP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: POWERPAK-SO-8L
SQJ850EP substitution
- MOSFET ⓘ Cross-Reference Search
SQJ850EP datasheet
sqj850ep.pdf
SQJ850EP www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.023 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.032 AEC-Q101 Qualifiedd ID (A) 24 100 % Rg and UIS Tested Configuration Single Compliant to RoHS ... See More ⇒
sqj858ep.pdf
SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 10 V 0.006 AEC-Q101 Qualified RDS(on) ( ) at VGS = 4.5 V 0.009 Material categorization ID (A) 75 For definitions of compliance please see Configuration Single www... See More ⇒
sqj858aep.pdf
SQJ858AEP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 40 AEC-Q101 Qualified RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0075 Material categorization ID (A) 58 For definitions of compliance please see Configuration Single ... See More ⇒
Detailed specifications: SQJ486EP, SQJ488EP, SQJ500AEP, SQJ840EP, SQJ844AEP, SQJ844EP, SQJ848AEP, SQJ848EP, IRF3710, SQJ858AEP, SQJ858EP, SQJ884EP, SQJ886EP, SQJ910AEP, SQJ912AEP, SQJ912EP, SQJ940EP
Keywords - SQJ850EP MOSFET specs
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