SQJ850EP Datasheet and Replacement
Type Designator: SQJ850EP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: POWERPAK-SO-8L
- MOSFET Cross-Reference Search
SQJ850EP Datasheet (PDF)
sqj850ep.pdf

SQJ850EPwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.023 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 AEC-Q101 QualifieddID (A) 24 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS
sqj858ep.pdf

SQJ858EPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.006 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.009 Material categorization:ID (A) 75For definitions of compliance please see Configuration Singlewww
sqj858aep.pdf

SQJ858AEPwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 40 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.0063 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0075 Material categorization:ID (A) 58For definitions of compliance please see Configuration Single
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | STU20L01 | SFFX054Z
Keywords - SQJ850EP MOSFET datasheet
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History: CHM85A3PAGP | STU20L01 | SFFX054Z



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