SQJ964EP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SQJ964EP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 38
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package: POWERPAK-SO-8L
SQJ964EP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SQJ964EP
Datasheet (PDF)
..1. Size:144K vishay
sqj964ep.pdf 
SQJ964EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.028 TrenchFET Power MOSFETID (A) per leg 8 AEC-Q101 Qualifiedd 100 % Rg and UIS TestedConfiguration Dual Compliant to RoHS Directive 2002/95/ECPowe
9.1. Size:155K vishay
sqj962ep.pdf
SQJ962EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.060 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.080 Material categorization:ID (A) per leg 8For definitions of compliance please see Configuration
9.2. Size:186K vishay
sqj963ep.pdf
SQJ963EPwww.vishay.comVishay SiliconixAutomotive Dual P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 60DefinitionRDS(on) () at VGS = - 10 V 0.085 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.115 AEC-Q101 QualifieddID (A) per leg - 8 100 % Rg and UIS TestedConfiguration Dual
9.3. Size:223K vishay
sqj968ep.pdf
SQJ968EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 AEC-Q101 qualifiedRDS(on) () at VGS = 10 V 0.0336 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0444 Material categorization: ID (A) per leg 18for definitions of compliance please see Configuration
9.4. Size:154K vishay
sqj960ep.pdf
SQJ960EPwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 AEC-Q101 QualifiedRDS(on) () at VGS = 10 V 0.036 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.046 Material categorization:ID (A) per leg 8For definitions of compliance please see Configuration
Datasheet: WPB4002
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