SQS400EN Specs and Replacement

Type Designator: SQS400EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: POWERPAK1212-8

SQS400EN substitution

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SQS400EN datasheet

 ..1. Size:557K  vishay
 sqs400en.pdf pdf_icon

SQS400EN

SQS400EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.018 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.032 AEC-Q101 Qualifiedd ID (A) 16 100 % Rg and UIS Tested Configuration Single Compliant to RoH... See More ⇒

 9.1. Size:214K  vishay
 sqs401enw.pdf pdf_icon

SQS400EN

SQS401ENW www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 AEC-Q101 qualified d RDS(on) ( ) at VGS = -10 V 0.029 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.047 Material categorization ID (A) -16 for definitions of compliance please see Configuration Single w... See More ⇒

 9.2. Size:553K  vishay
 sqs405en.pdf pdf_icon

SQS400EN

SQS405EN www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) - 12 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = - 4.5 V 0.020 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 2.5 V 0.026 ID (A) - 16 Material categorization For definitions of compliance please see Configuration Si... See More ⇒

 9.3. Size:198K  vishay
 sqs405enw.pdf pdf_icon

SQS400EN

SQS405ENW www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -12 AEC-Q101 qualified d RDS(on) ( ) at VGS = -4.5 V 0.020 100 % Rg and UIS tested RDS(on) ( ) at VGS = -2.5 V 0.026 Wettable flank terminals ID (A) -16 Configuration Single Material categorization for definitio... See More ⇒

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Detailed specifications: SQJ963EP, SQJ964EP, SQJ968EP, SQJ970EP, SQJ980AEP, SQJ980EP, SQJ992EP, SQJQ402E, SKD502T, SQS401EN, SQS404EN, SQS405EN, SQS405ENW, SQS420EN, SQS423EN, SQS460EN, SQS462EN

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