All MOSFET. SQS400EN Datasheet

 

SQS400EN Datasheet and Replacement


   Type Designator: SQS400EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: POWERPAK1212-8
      - MOSFET Cross-Reference Search

 

SQS400EN Datasheet (PDF)

 ..1. Size:557K  vishay
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SQS400EN

SQS400ENwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.018 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 AEC-Q101 QualifieddID (A) 16 100 % Rg and UIS TestedConfiguration Single Compliant to RoH

 9.1. Size:214K  vishay
sqs401enw.pdf pdf_icon

SQS400EN

SQS401ENWwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualified dRDS(on) () at VGS = -10 V 0.029 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.047 Material categorization: ID (A) -16for definitions of compliance please seeConfiguration Singlew

 9.2. Size:553K  vishay
sqs405en.pdf pdf_icon

SQS400EN

SQS405ENwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 12 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.020 100 % Rg and UIS TestedRDS(on) () at VGS = - 2.5 V 0.026ID (A) - 16 Material categorization:For definitions of compliance please see Configuration Si

 9.3. Size:198K  vishay
sqs405enw.pdf pdf_icon

SQS400EN

SQS405ENWwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -12 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.020 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.026 Wettable flank terminalsID (A) -16Configuration Single Material categorization:for definitio

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FCPF7N60YDTU | H7N1002LM | AP6679GI-HF | DM12N65C | SPD04N60S5 | SM6A12NSFP

Keywords - SQS400EN MOSFET datasheet

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