All MOSFET. SQS405EN Datasheet

 

SQS405EN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SQS405EN
   Marking Code: Q007
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 49.8 nC
   trⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: POWERPAK1212-8

 SQS405EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS405EN Datasheet (PDF)

 ..1. Size:553K  vishay
 sqs405en.pdf

SQS405EN SQS405EN

SQS405ENwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 12 AEC-Q101 QualifieddRDS(on) () at VGS = - 4.5 V 0.020 100 % Rg and UIS TestedRDS(on) () at VGS = - 2.5 V 0.026ID (A) - 16 Material categorization:For definitions of compliance please see Configuration Si

 0.1. Size:198K  vishay
 sqs405enw.pdf

SQS405EN SQS405EN

SQS405ENWwww.vishay.comVishay SiliconixAutomotive P-Channel 12 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -12 AEC-Q101 qualified dRDS(on) () at VGS = -4.5 V 0.020 100 % Rg and UIS testedRDS(on) () at VGS = -2.5 V 0.026 Wettable flank terminalsID (A) -16Configuration Single Material categorization:for definitio

 9.1. Size:557K  vishay
 sqs400en.pdf

SQS405EN SQS405EN

SQS400ENwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.018 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.032 AEC-Q101 QualifieddID (A) 16 100 % Rg and UIS TestedConfiguration Single Compliant to RoH

 9.2. Size:214K  vishay
 sqs401enw.pdf

SQS405EN SQS405EN

SQS401ENWwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 AEC-Q101 qualified dRDS(on) () at VGS = -10 V 0.029 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.047 Material categorization: ID (A) -16for definitions of compliance please seeConfiguration Singlew

 9.3. Size:559K  vishay
 sqs401en.pdf

SQS405EN SQS405EN

SQS401ENwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.029 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.047 AEC-Q101 QualifieddID (A) - 16 100 % Rg and UIS TestedConfiguration Single Complian

 9.4. Size:556K  vishay
 sqs404en.pdf

SQS405EN SQS405EN

SQS404ENwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 30DefinitionRDS(on) () at VGS = 10 V 0.013 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.015 AEC-Q101 QualifieddRDS(on) () at VGS = 2.5 V 0.022 100 % Rg and UIS TestedID (A) 16 Co

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STT04N20

 

 
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