SQS420EN Specs and Replacement

Type Designator: SQS420EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: POWERPAK1212-8

SQS420EN substitution

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SQS420EN datasheet

 ..1. Size:556K  vishay
 sqs420en.pdf pdf_icon

SQS420EN

SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) ( ) at VGS = 4.5 V 0.0280 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 2.5 V 0.0320 AEC-Q101 Qualifiedd RDS(on) ( ) at VGS = 1.8 V 0.0380 100 % Rg and UIS Tested ID (A) 8 ... See More ⇒

 9.1. Size:552K  vishay
 sqs423en.pdf pdf_icon

SQS420EN

SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 C MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY AEC-Q101 Qualifiedd VDS (V) - 30 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 10 V 0.021 Material categorization RDS(on) ( ) at VGS = - 4.5 V 0.060 For definitions of compliance please see ID (A) - 16 www.vishay.com/d... See More ⇒

Detailed specifications: SQJ980EP, SQJ992EP, SQJQ402E, SQS400EN, SQS401EN, SQS404EN, SQS405EN, SQS405ENW, 5N65, SQS423EN, SQS460EN, SQS462EN, SQS464EEN, SQS466EEN, SQS482EN, SQS484EN, SQS840EN

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