All MOSFET. SQS420EN Datasheet

 

SQS420EN MOSFET. Datasheet pdf. Equivalent

Type Designator: SQS420EN

SMD Transistor Code: Q011

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 18 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 9 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm

Package: PowerPAK1212-8

SQS420EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS420EN Datasheet (PDF)

1.1. sqs420en.pdf Size:556K _update

SQS420EN
SQS420EN

SQS420EN www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 20 Definition RDS(on) () at VGS = 4.5 V 0.0280 • TrenchFET® Power MOSFET RDS(on) () at VGS = 2.5 V 0.0320 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 1.8 V 0.0380 • 100 % Rg and UIS Tested ID (A) 8 •

5.1. sqs423en.pdf Size:552K _update

SQS420EN
SQS420EN

SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES • TrenchFET® Power MOSFET PRODUCT SUMMARY • AEC-Q101 Qualifiedd VDS (V) - 30 • 100 % Rg and UIS Tested RDS(on) () at VGS = - 10 V 0.021 • Material categorization: RDS(on) () at VGS = - 4.5 V 0.060 For definitions of compliance please see ID (A) - 16 www.vishay.com/d

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
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