All MOSFET. IXTH12N50A Datasheet

 

IXTH12N50A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTH12N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247

 IXTH12N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH12N50A Datasheet (PDF)

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Datasheet: IXTH10N100 , IXTH10N90 , IXTH10P50 , IXTH11N80 , IXTH11P50 , IXTH12N100 , IXTH12N45MA , IXTH12N45MB , SKD502T , IXTH12N50MA , IXTH12N50MB , IXTH12N90 , IXTH13N110 , IXTH13N80 , IXTH14N100 , IXTH14N80 , IXTH15N35MA .

 

 
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