All MOSFET. IXTH12N50A Datasheet

 

IXTH12N50A Datasheet and Replacement


   Type Designator: IXTH12N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO247
 

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IXTH12N50A Datasheet (PDF)

 ..1. Size:62K  ixys
ixth12n50a ixtm12n50a.pdf pdf_icon

IXTH12N50A

VDSS ID25 RDS(on)StandardIXTH 12 N50A 500 V 12 A 0.4 Power MOSFETIXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C12 AIDM TC

 7.1. Size:175K  ixys
ixtt12n150 ixth12n150.pdf pdf_icon

IXTH12N50A

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

Datasheet: IXTH10N100 , IXTH10N90 , IXTH10P50 , IXTH11N80 , IXTH11P50 , IXTH12N100 , IXTH12N45MA , IXTH12N45MB , IRF1405 , IXTH12N50MA , IXTH12N50MB , IXTH12N90 , IXTH13N110 , IXTH13N80 , IXTH14N100 , IXTH14N80 , IXTH15N35MA .

Keywords - IXTH12N50A MOSFET datasheet

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