SQS840EN Specs and Replacement

Type Designator: SQS840EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.4 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: POWERPAK1212-8

SQS840EN substitution

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SQS840EN datasheet

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 sqs840en.pdf pdf_icon

SQS840EN

SQS840EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 40 AEC-Q101 qualified d RDS(on) ( ) at VGS = 10 V 0.0200 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0300 Material categorization ID (A) 12 For definitions of compliance please see Configuration Single www.v... See More ⇒

Detailed specifications: SQS420EN, SQS423EN, SQS460EN, SQS462EN, SQS464EEN, SQS466EEN, SQS482EN, SQS484EN, STP80NF70, SQS850EN, SQV120N10-3M8, SQV90N06-05, SRADM1002, SRADM1003, SRADM1004, SRADM1005, SRADM1006

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