All MOSFET. SQS840EN Datasheet

 

SQS840EN Datasheet and Replacement


   Type Designator: SQS840EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9.4 nS
   Cossⓘ - Output Capacitance: 131 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: POWERPAK1212-8
 

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SQS840EN Datasheet (PDF)

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SQS840EN

SQS840ENwww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 40 AEC-Q101 qualified dRDS(on) () at VGS = 10 V 0.0200 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0300 Material categorization:ID (A) 12For definitions of compliance please seeConfiguration Singlewww.v

Datasheet: SQS420EN , SQS423EN , SQS460EN , SQS462EN , SQS464EEN , SQS466EEN , SQS482EN , SQS484EN , 20N50 , SQS850EN , SQV120N10-3M8 , SQV90N06-05 , SRADM1002 , SRADM1003 , SRADM1004 , SRADM1005 , SRADM1006 .

History: APT4080BN | 25N10G-TM3-T

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