All MOSFET. SQS840EN Datasheet

 

SQS840EN MOSFET. Datasheet pdf. Equivalent

Type Designator: SQS840EN

SMD Transistor Code: Q004

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 33 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 9.4 nS

Drain-Source Capacitance (Cd): 131 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: PowerPAK1212-8

SQS840EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SQS840EN Datasheet (PDF)

1.1. sqs840en.pdf Size:616K _update

SQS840EN
SQS840EN

SQS840EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 40 • AEC-Q101 qualified d RDS(on) (Ω) at VGS = 10 V 0.0200 • 100 % Rg and UIS tested RDS(on) (Ω) at VGS = 4.5 V 0.0300 • Material categorization: ID (A) 12 For definitions of compliance please see Configuration Single www.v

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
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