All MOSFET. SRADM1007 Datasheet

 

SRADM1007 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRADM1007
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SMD-0.5

 SRADM1007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRADM1007 Datasheet (PDF)

 ..1. Size:143K  sensitron
 sradm1007.pdf

SRADM1007 SRADM1007

SENSITRON SRADM1007 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5405, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 55, Range: 90m VGS = -20V, VDS = 100V Total Ionization Dose (TID) hardened, 100kRad Surface mount SMD-0.5 package Near equivalent to IRHNJ7130 MAXIMUM RATINGS ALL RATINGS AR

 6.1. Size:151K  sensitron
 sradm1004.pdf

SRADM1007 SRADM1007

SENSITRON SRADM1004 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5399, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad Surface mount SMD-2 package Near equivalent to IRHNA67260 MAXIMUM RAT

 6.2. Size:143K  sensitron
 sradm1005.pdf

SRADM1007 SRADM1007

SRADM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5403, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 85, Range: 118m VGS = -10V, VDS = 250V VGS = -15V, VDS = 120V o LET 55, Range: 90m VGS = -15V, VDS = 250V VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened,

 6.3. Size:135K  sensitron
 sradm1006.pdf

SRADM1007 SRADM1007

SENSITRON SRADM1006 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5404, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 55, Range: 90m VGS = -20V, VDS = 100V Total Ionization Dose (TID) hardened, 100kRad Isolated TO-257 package Near equivalent to IRHY7130CM MAXIMUM RATINGS ALL RATINGS ARE AT

 6.4. Size:123K  sensitron
 sradm1003.pdf

SRADM1007 SRADM1007

SRADM1003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5398, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad TO-254 package Near equivalent to IRHMS67260 MAXIMUM RATINGS ALL RAT

 6.5. Size:136K  sensitron
 sradm1008.pdf

SRADM1007 SRADM1007

SRADM1008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5406, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, o LET 85, Range: 118m VGS = -10V, VDS = 250V VGS = -15V, VDS = 120V o LET 55, Range: 90m VGS = -15V, VDS = 250V VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened

 6.6. Size:174K  sensitron
 sradm1002.pdf

SRADM1007 SRADM1007

SENSITRON SRADM1002 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5311, REV. A HERMETIC RAD HARD POWER MOSFET N-CHANNEL QUAD FEATURES: Four 250 Volt, 0.36 Ohm, 4.4A RAD HARD MOSFETs Single Event Effect (SEE) hardened, LET 55, Range: 90m o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad (Level R) Fast Switching

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PP9H06BD

 

 
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