SRM4N60D1
MOSFET. Datasheet pdf. Equivalent
Type Designator: SRM4N60D1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 52
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 68
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.41
Ohm
Package:
TO-251
SRM4N60D1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRM4N60D1
Datasheet (PDF)
7.1. Size:305K sanrise-tech
srm4n60.pdf
Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
8.1. Size:305K sanrise-tech
srm4n65.pdf
Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
9.1. Size:171K sanrise-tech
srm4n70.pdf
Datasheet 4A, 700V, N-Channel Power MOSFET SRM4N70General Description Symbol The Sanrise SRM4N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM4N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.