All MOSFET. SRM6N70 Datasheet

 

SRM6N70 Datasheet and Replacement


   Type Designator: SRM6N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 87.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.67 Ohm
   Package: TO-251
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SRM6N70 Datasheet (PDF)

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SRM6N70

Datasheet 6A, 700V, N-Channel Power MOSFET SRM6N70General Description Symbol The Sanrise SRM6N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM6N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a

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SRM6N70

Datasheet 6A, 600V, N-Channel Power MOSFET SRM6N60General Description Symbol The Sanrise SRM6N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM6N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

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History: TK2P60D | NTHS5441 | IRFBG20 | DMP2104LP

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