SRM7N65DTR-E1 Specs and Replacement
Type Designator: SRM7N65DTR-E1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-252
SRM7N65DTR-E1 substitution
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SRM7N65DTR-E1 datasheet
srm7n65e1.pdf
Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65 General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high ... See More ⇒
srm7n65.pdf
Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65 General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high ... See More ⇒
srm7n60.pdf
Datasheet 7A, 600V, N-Channel Power MOSFET SRM7N60 General Description Symbol The Sanrise SRM7N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high ... See More ⇒
Detailed specifications: SRM4N70, SRM6N60D1, SRM6N60DTR, SRM6N60TF, SRM6N70, SRM7N60, SRM7N65, SRM7N65D1-E1, IRF3205, SRM7N65TF-E1, SRM7N65TC-E1, SS05N70, SS07N70, SSD80N03, SSFM2506L, SSFM2508, ST1002
Keywords - SRM7N65DTR-E1 MOSFET specs
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