SRM7N65DTR-E1 MOSFET. Datasheet pdf. Equivalent
Type Designator: SRM7N65DTR-E1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-252
SRM7N65DTR-E1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRM7N65DTR-E1 Datasheet (PDF)
srm7n65e1.pdf
Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm7n65.pdf
Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm7n60.pdf
Datasheet 7A, 600V, N-Channel Power MOSFET SRM7N60General Description Symbol The Sanrise SRM7N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
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History: SI5456DU | IRFU420B | SSP60N05 | HUF75637S3S | STT812A
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