SSFM2506L Datasheet and Replacement
Type Designator: SSFM2506L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 65.4 nS
Cossⓘ - Output Capacitance: 500.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO-252
SSFM2506L substitution
SSFM2506L Datasheet (PDF)
ssfm2506l.pdf

SSFM2506L 25V N-Channel MOSFET Main Product Characteristics: VDSS 25V SSSFFM25006SSSFFM25006SSSFFM25006SSSFFM25006S M 25 8S M 25 8S M 25 8S M 25 8SS F M 2508SS F M 2508SS F M 2508SS F M 2508SSFM2506LSSFM2506L RDS(on) 6mohm Marking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pinMarking and pin
ssfm2506.pdf

SSFM2506 Main Product Characteristics: VDSS 25V RDS(on) 4.1mohm(typ.) ID 60A Sch emati c di ag ram TO-252 (D-PAK) Mar ki ng a nd pin Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and revers
ssfm2508.pdf

SSFM2508 25V N-Channel MOSFET Main Product Characteristics: VDSS 25V SSFM2508SSFM2508RDS(on) 8mohm ID 55A Marking and pin Marking and pinTO-252 DPAKTO-252 DPAKassignmentassignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low
Datasheet: SRM7N65 , SRM7N65D1-E1 , SRM7N65DTR-E1 , SRM7N65TF-E1 , SRM7N65TC-E1 , SS05N70 , SS07N70 , SSD80N03 , 50N06 , SSFM2508 , ST1002 , ST1004SRG , ST1005SRG , ST10E4 , ST12N10D , ST13P10 , ST2300 .
History: SPP6506S26R
Keywords - SSFM2506L MOSFET datasheet
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History: SPP6506S26R



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