ST25N10 Specs and Replacement
Type Designator: ST25N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-252
ST25N10 substitution
- MOSFET ⓘ Cross-Reference Search
ST25N10 datasheet
st25n10.pdf
ST25N10 N Channel Enhancement Mode MOSFET 25.0A DESCRIPTION ST25N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o... See More ⇒
ost25n65pmf.pdf
OST25N65PMF Enhancement Mode N-Channel Power IGBT General Description OST25N65PMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog... See More ⇒
ost25n65fmf.pdf
OST25N65FMF Enhancement Mode N-Channel Power IGBT General Description OST25N65FMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog... See More ⇒
Detailed specifications: ST2304SRG, ST2305, ST2305A, ST2318SRG, ST2319SRG, ST2341A, ST2341S23RG, ST2342, AON7408, ST3400S23RG, ST3400SRG, ST3401M23RG, ST3401SRG, ST3406, ST3406SRG, ST3407S23RG, ST3407SRG
Keywords - ST25N10 MOSFET specs
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