ST3407S23RG PDF and Equivalents Search

ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho... See More ⇒

ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a... See More ⇒

WST3407A P-Ch MOSFET Product Summery General Description The WST3407A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 75m -5.3A gate charge for most of the small power switching and load switch applications. Applications The WST3407A meet the RoHS and Green Product requirement with full ... See More ⇒

WST3407 P-Ch MOSFET Product Summery General Description The WST3407 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 41m -5.8A for most of the small power switching and load switch applications. Applications The WST3407 meet the RoHS and Green Product requirement with full fu... See More ⇒