ST9435A MOSFET Datasheet: P-Ch, 30V, 6.5A. Full specification with pinout and replacement list

ST9435A Specs and Replacement

Type Designator: ST9435A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOP-8

ST9435A substitution

- MOSFET ⓘ Cross-Reference Search

ST9435A datasheet

..1. Size:396K stansontech
st9435a.pdf pdf_icon

ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note... See More ⇒

8.1. Size:359K stansontech
st9435gp.pdf pdf_icon

ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power... See More ⇒

Detailed specifications: ST3413A, ST3414A, ST3421SRG, ST3422A, ST36N06, ST36N10D, ST47P06D, ST75N75, 5N65, ST9435GP, SUB65P04-15, SUB75P03-07, SUB85N10-10, SUD06N10-225L, SUD08P06-155L, SUD09P10-195, SUD15N15-95