ST9435A Datasheet and Replacement
Type Designator: ST9435A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 16 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOP-8
ST9435A substitution
ST9435A Datasheet (PDF)
st9435a.pdf

ST9435A P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as battery pack, note
st9435gp.pdf

ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power
Datasheet: ST3413A , ST3414A , ST3421SRG , ST3422A , ST36N06 , ST36N10D , ST47P06D , ST75N75 , 4435 , ST9435GP , SUB65P04-15 , SUB75P03-07 , SUB85N10-10 , SUD06N10-225L , SUD08P06-155L , SUD09P10-195 , SUD15N15-95 .
History: SI4850EY | 2P524A9 | APT50M65JLL | 2SK1679 | FS10KM-9 | SRC4N65D1 | SM1A11NSF
Keywords - ST9435A MOSFET datasheet
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History: SI4850EY | 2P524A9 | APT50M65JLL | 2SK1679 | FS10KM-9 | SRC4N65D1 | SM1A11NSF



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