All MOSFET. SUD25N15-52 Datasheet

 

SUD25N15-52 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD25N15-52
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-252

 SUD25N15-52 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD25N15-52 Datasheet (PDF)

 ..1. Size:162K  vishay
 sud25n15-52.pdf

SUD25N15-52 SUD25N15-52

SUD25N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 25150 PWM Optimized0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Primary Side SwitchDDrain Connec

 ..2. Size:192K  inchange semiconductor
 sud25n15-52.pdf

SUD25N15-52 SUD25N15-52

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD25N15-52FEATURESTrenchFET Power MOSFET175 Junction Temperature100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND Primary Side SwitchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV

 0.1. Size:208K  inchange semiconductor
 sud25n15-52-e3.pdf

SUD25N15-52 SUD25N15-52

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUD25N15-52-E3FEATURESTrenchFET Power MOSFET175 C Junction Temperature100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND Primary Side SwitchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 V

 6.1. Size:145K  vishay
 sud25n15.pdf

SUD25N15-52 SUD25N15-52

SUD25N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 25150 PWM Optimized0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Primary Side SwitchDDrain Connec

 8.1. Size:50K  vishay
 sud25n04-25 sud25n04.pdf

SUD25N15-52 SUD25N15-52

SUD25N04-25Vishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.025 @ VGS = 10 V 25400.040 @ VGS = 4.5 V 20DTO-252GDrain Connected to TabG D STop ViewOrder Number:SSUD25N04-25N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 40VGate-Sour

 8.2. Size:88K  vishay
 sud25n06-45l.pdf

SUD25N15-52 SUD25N15-52

SUD25N06-45LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.035 @ VGS = 10 V 2560600.045 @ VGS = 4.5 V 22DTO-252GDrain Connected to TabG D STop ViewSOrder Number:SUD25N06-45LN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage

 8.3. Size:1376K  cn vbsemi
 sud25n06-45l.pdf

SUD25N15-52 SUD25N15-52

SUD25N06-45Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

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History: SSF1030

 

 
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