All MOSFET. IXTH20N55MA Datasheet

 

IXTH20N55MA Datasheet and Replacement


   Type Designator: IXTH20N55MA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO247
 

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IXTH20N55MA Datasheet (PDF)

 7.1. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH20N55MA

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 7.2. Size:105K  ixys
 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH20N55MA

IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p

 7.3. Size:231K  ixys
 ixta20n65x ixth20n65x ixtp20n65x.pdf pdf_icon

IXTH20N55MA

Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG

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Datasheet: IXTH14N100 , IXTH14N80 , IXTH15N35MA , IXTH15N35MB , IXTH15N40MA , IXTH15N40MB , IXTH15N60 , IXTH20M60MB , IRF730 , IXTH20N55MB , IXTH20N60 , IXTH20N60MA , IXTH21N50 , IXTH23N25MA , IXTH23N25MB , IXTH24N45MA , IXTH24N45MB .

History: APM9988QG | APQ01SN60AB

Keywords - IXTH20N55MA MOSFET datasheet

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