SUM110N04-2M3L
MOSFET. Datasheet pdf. Equivalent
Type Designator: SUM110N04-2M3L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 375
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 110
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 240
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 1420
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023
Ohm
Package:
TO-263
SUM110N04-2M3L
Datasheet (PDF)
..1. Size:151K vishay
sum110n04-2m3l.pdf 
SUM110N04-2m3LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 100 % Rg TestedRoHS0.0023 at VGS = 10 V COMPLIANT 40110a0.003 at VGS = 4.5 V DTO-263GG D STop ViewSN-Channel MOSFETOrdering Information: SUM110N04-2m3L-E3 (Lead (Pb)-free)ABSOLUTE MAXIMUM RATINGS T
2.1. Size:154K vishay
sum110n04-2m1p.pdf
New ProductSUM110N04-2m1PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0021 at VGS = 10 V 110COMPLIANT 40 240 nC0.0024 at VGS = 4.5 V 110APPLICATIONS Synchronous Rectification Power SuppliesDTO-263 GG D S Top View S
4.1. Size:90K vishay
sum110n04-05h.pdf
SUM110N04-05HVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ.) 175 C Junction TemperatureRoHS0.0053 at VGS = 10 V 40 95110COMPLIANT High Threshold Voltage at High TemperatureDTO-263GG D STop View SN-Channel MOSFETOrdering Information: SUM110N04-05H-E
4.2. Size:101K vishay
sum110n04-04.pdf
SUM110N04-04Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature40 0.0035 at VGS = 10 V 110aRoHS*COMPLIANTTO-263DGG D STop ViewSOrdering Information: SUM110N04-04SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLUTE MAXIMUM RA
4.3. Size:100K vishay
sum110n04-02l.pdf
SUM110N04-02LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available New Package with Low Thermal Resistance 0.0023 at VGS = 10 V RoHS*40110a0.0038 at VGS = 4.5 V COMPLIANTDTO-263 GG D S Top View SOrdering Information: SUM110N04-02LSUM110N04-02L-E3 (Lead (Pb)-fr
4.4. Size:99K vishay
sum110n04-03p.pdf
SUM110N04-03PVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.0031 at VGS = 10 V 40110aRoHS* Package with Low Thermal ResistanceCOMPLIANT Extremely Low Qgd WFETTM Technology for Low Switching Losses 100 % Rg TestedDTO
4.5. Size:95K vishay
sum110n04-03.pdf
SUM110N04-03Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available Package with Low Thermal Resistance0.0028 at VGS = 10 V40110aRoHS*COMPLIANTDTO-263GG D STop ViewSOrdering Information: SUM110N04-03SUM110N04-03-E3 (Lead (Pb)-free)N-Channel MOSFETABSOLUTE MA
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.
