All MOSFET. SUM23N15-73 Datasheet

 

SUM23N15-73 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUM23N15-73
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.073 Ohm
   Package: TO-263

 SUM23N15-73 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUM23N15-73 Datasheet (PDF)

 ..1. Size:167K  vishay
 sum23n15-73.pdf

SUM23N15-73 SUM23N15-73

SUM23N15-73Vishay SiliconixN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.073 at VGS = 10 V 23 Low Thermal Resistance Package1500.077 at VGS = 6 V 22.5 PWM Optimized Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchTO-2

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SFG10R12DF | BSB012NE2LXI

 

 
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