All MOSFET. SUM45N25-58 Datasheet

 

SUM45N25-58 Datasheet and Replacement


   Type Designator: SUM45N25-58
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TO-263
 

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SUM45N25-58 Datasheet (PDF)

 ..1. Size:76K  vishay
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SUM45N25-58

New ProductSUM45N25-58Vishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction Temperature0.058 at VGS = 10 V RoHS45250 COMPLIANT New Low Thermal Resistance Package0.062 at VGS = 6 V43APPLICATIONS Primary Side Switch Plasma Display Panel Sustainer F

Datasheet: SUM23N15-73 , SUM25P10-138 , SUM27N20-78 , SUM33N20-60P , SUM36N20-54P , SUM40N02-12P , SUM40N10-30 , SUM40N15-38 , IRFZ24N , SUM47N10-24L , SUM50N06-16L , SUM50P10-42 , SUM52N20-39P , SUM55P06-19L , SUM60N02-3M9P , SUM60N10-17 , SUM65N20-30 .

History: HY4504B | IPD50R800CE | PMFPB6545UP | BUK9635-100A | DMN66D0LDW | HY1720B | IRFS9632

Keywords - SUM45N25-58 MOSFET datasheet

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