SUM45N25-58 MOSFET. Datasheet pdf. Equivalent
Type Designator: SUM45N25-58
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 95 nC
trⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: TO-263
SUM45N25-58 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUM45N25-58 Datasheet (PDF)
..1. Size:76K vishay
sum45n25-58 sum45n25.pdf
sum45n25-58 sum45n25.pdf
New ProductSUM45N25-58Vishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction Temperature0.058 at VGS = 10 V RoHS45250 COMPLIANT New Low Thermal Resistance Package0.062 at VGS = 6 V43APPLICATIONS Primary Side Switch Plasma Display Panel Sustainer F
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
