SUM70N04-07L MOSFET. Datasheet pdf. Equivalent
Type Designator: SUM70N04-07L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm
Package: TO-263
SUM70N04-07L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUM70N04-07L Datasheet (PDF)
sum70n04-07l.pdf
SUM70N04-07LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.0074 at VGS = 10 V70aRoHS*40 Low Threshold0.011 at VGS = 4.5 V COMPLIANT67APPLICATIONS Motor ControlDTO-263GG D SSTop ViewOrdering Information: SUM70N
sum70n03-09cp.pdf
SUM70N03-09CPVishay SiliconixN-Channel 30-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD Optimized for High- or Low-SideV(BR)DSS (V) rDS(on) (W) ID (A)D New Low Thermal Resistance Package0.0095 @ VGS = 20 V 70D 100% Rg Tested30300.014 @ VGS = 4.5 V 58APPLICATIONSD DC/DC ConvertersD Synchronous RectifiersDTO-263DRAIN connected to TAB
sum70060e.pdf
SUM70060Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0056 at VGS = 10 V 131100 53.5 nC 100 % Rg and UIS tested0.0062 at VGS = 7.5 V 129 Material categorization:for definitions of compliance please see TO-263
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
