SUP85N03-04P MOSFET Datasheet: N-Ch, 30V, 85A. Full specification with pinout and replacement list

SUP85N03-04P Specs and Replacement

Type Designator: SUP85N03-04P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO-220AB

SUP85N03-04P substitution

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SUP85N03-04P datasheet

..1. Size:70K vishay
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SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature 0.0043 @ VGS = 10 V 85a D TO-263 (D2PAK) 100% Rg Tested 30 30 0.007 @ VGS = 4.5 V 85a D TO-220AB TO-263 (D2PAK) G DRAIN connected to TAB G D S Top View G D S S SUB85N03-04P Top View N... See More ⇒

4.1. Size:63K 1
sup85n03-07p sub85n03-07p.pdf pdf_icon

SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 30 30 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P Top View N-Channel MOSFET SUP85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb... See More ⇒

5.1. Size:95K vishay
sup85n03-3m6p.pdf pdf_icon

SUP85N03-3m6P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0036 at VGS = 10 V 85d TrenchFET Power MOSFET 30 67 0.0044 at VGS = 4.5 V 85d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Second... See More ⇒

5.2. Size:873K cn vbsemi
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SUP85N03-3M6P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View... See More ⇒

Detailed specifications: SUP60N10-16L, SUP60N10-18P, SUP65P04-15, SUP70N03-09BP, SUP75N03-04, SUP75P03-07, SUP75P05-08, SUP85N02-03, IRF840, SUP85N03-3M6P, SUP85N04-03, SUP85N10-10, SUP85N10-10P, SUP85N15-21, SUP90N03-03, SUP90N04-3M3P, SUP90N06-5M0P