All MOSFET. SUP85N03-04P Datasheet

 

SUP85N03-04P Datasheet and Replacement


   Type Designator: SUP85N03-04P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1380 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO-220AB
 

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SUP85N03-04P Datasheet (PDF)

 ..1. Size:70K  vishay
sub85n03-04p sup85n03-04p sup85n03-04p.pdf pdf_icon

SUP85N03-04P

SUP/SUB85N03-04PVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction Temperature0.0043 @ VGS = 10 V 85aD TO-263 (D2PAK) 100% Rg Tested30300.007 @ VGS = 4.5 V 85aDTO-220ABTO-263(D2PAK)GDRAIN connected to TABG D STop ViewG D SSSUB85N03-04PTop ViewN

 4.1. Size:63K  1
sup85n03-07p sub85n03-07p.pdf pdf_icon

SUP85N03-04P

SUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.007 @ VGS = 10 V 85 a30300.01 @ VGS = 4.5 V 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N03-07PTop ViewN-Channel MOSFETSUP85N03-07PABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symb

 5.1. Size:95K  vishay
sup85n03-3m6p.pdf pdf_icon

SUP85N03-04P

SUP85N03-3m6PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0036 at VGS = 10 V85d TrenchFET Power MOSFET30 670.0044 at VGS = 4.5 V85d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Second

 5.2. Size:873K  cn vbsemi
sup85n03-3m6p.pdf pdf_icon

SUP85N03-04P

SUP85N03-3M6Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop View

Datasheet: SUP60N10-16L , SUP60N10-18P , SUP65P04-15 , SUP70N03-09BP , SUP75N03-04 , SUP75P03-07 , SUP75P05-08 , SUP85N02-03 , IRF840 , SUP85N03-3M6P , SUP85N04-03 , SUP85N10-10 , SUP85N10-10P , SUP85N15-21 , SUP90N03-03 , SUP90N04-3M3P , SUP90N06-5M0P .

History: MTP1067C6 | SI1031R | HMS21N65 | AFP1433 | DAMH300N150 | NCE6042AG | QM4001D

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