SUP85N04-03 MOSFET. Datasheet pdf. Equivalent
Type Designator: SUP85N04-03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 85 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 1320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220AB
SUP85N04-03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUP85N04-03 Datasheet (PDF)
sup85n04-03 sub85n04-03.pdf
SUP/SUB85N04-03New ProductVishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0035 @ VGS = 10 Va40 85 a40 850.0053 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N04-03Top ViewN-Channel MOSFETSUP85N04-03ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Sy
sup85n04-03.pdf
SUP/SUB85N04-03New ProductVishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0035 @ VGS = 10 Va40 85 a40 850.0053 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N04-03Top ViewN-Channel MOSFETSUP85N04-03ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Sy
sup85n04-04 sub85n04-04.pdf
SUP/SUB85N04-04Vishay SiliconixN-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)40 0.004 @ VGS = 10 V 85 aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSTop ViewOrdering Information Ordering InformationN-Channel MOSFETSUP85N04-04 SUB85N04-04SUP85N04-04E3 (Lead (Pb)-Free) SUB85N04-04E3 (Lead (Pb)-Free)ABSOLUTE
sup85n03-07p sub85n03-07p.pdf
SUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.007 @ VGS = 10 V 85 a30300.01 @ VGS = 4.5 V 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N03-07PTop ViewN-Channel MOSFETSUP85N03-07PABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symb
sup85n03-3m6p.pdf
SUP85N03-3m6PVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0036 at VGS = 10 V85d TrenchFET Power MOSFET30 670.0044 at VGS = 4.5 V85d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Second
sup85n02-06 sub85n02-06.pdf
SUP/SUB85N02-06New ProductVishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.006 @ VGS = 4.5 V 8520200.009 @ VGS = 2.5 V 85DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N02-06Top ViewN-Channel MOSFETSUP85N02-06ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol
sub85n03-04p sup85n03-04p sup85n03-04p.pdf
SUP/SUB85N03-04PVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction Temperature0.0043 @ VGS = 10 V 85aD TO-263 (D2PAK) 100% Rg Tested30300.007 @ VGS = 4.5 V 85aDTO-220ABTO-263(D2PAK)GDRAIN connected to TABG D STop ViewG D SSSUB85N03-04PTop ViewN
sup85n06-05 sub85n06-05.pdf
SUP/SUB85N06-05New ProductVishay SiliconixN-Channel 60-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)0.0052 @ VGS = 10 V60 "85 a"0.0072 @ VGS = 4.5 VDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N06-05Top ViewN-Channel MOSFETSUP85N06-05ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol L
sub85n08-08 sup85n08-08.pdf
SUP/SUB85N08-08New ProductVishay SiliconixN-Channel 75-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)75 0.008 @ VGS = 10 V 85 aDTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N08-08Top ViewN-Channel MOSFETSUP85N08-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Volt
sup85n02-03 sub85n02-03.pdf
SUP/SUB85N02-03Vishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.003 @ VGS = 4.5 V 8520 0.0034 @ VGS = 2.5 V 850.0038 @ VGS = 1.8 V 85DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SOrdering Information:Top ViewSSUB85N02-03E3 (Lead Free)Ordering Information:N-Channel MOSFETSUP85N02-03E3 (Le
sup85n02-03.pdf
SUP/SUB85N02-03Vishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.003 @ VGS = 4.5 V 8520 0.0034 @ VGS = 2.5 V 850.0038 @ VGS = 1.8 V 85DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SOrdering Information:Top ViewSSUB85N02-03E3 (Lead Free)Ordering Information:N-Channel MOSFETSUP85N02-03E3 (Le
sup85n03 sub85n03.pdf
SUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.007 @ VGS = 10 V 85 a30300.01 @ VGS = 4.5 V 75DTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SSSUB85N03-07PTop ViewN-Channel MOSFETSUP85N03-07PABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symb
sup85n03-3m6p.pdf
SUP85N03-3M6Pwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop View
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTP160N085T
History: IXTP160N085T
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