All MOSFET. SM2558NSUC Datasheet

 

SM2558NSUC Datasheet and Replacement


   Type Designator: SM2558NSUC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO-251
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SM2558NSUC Datasheet (PDF)

 ..1. Size:228K  sino
 sm2558nsuc.pdf pdf_icon

SM2558NSUC

SM2558NSUCN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=5.2m (max.) @ VGS=10VSRDS(ON)=9.5m (max.) @ VGS=4.5VDG Reliable and Rugged Avalanche RatedTop View of TO-251 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar

 7.1. Size:152K  sino
 sm2558nub.pdf pdf_icon

SM2558NSUC

SM2558NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (Typ.) @ VGS=10VRDS(ON)=7.5m (Typ.) @ VGS=4.5VSD Reliable and RuggedG Avalanche Rated Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-C

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History: SFG60N12FF | AON6794 | BUZ84 | CED05N8 | SWH065R03VLT | IRLR024 | BL10N70-A

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