MMD70R600PRH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMD70R600PRH
Marking Code: 70R600P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 71
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 23
nC
trⓘ - Rise Time: 27.6
nS
Cossⓘ -
Output Capacitance: 34.9
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO-252
MMD70R600PRH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMD70R600PRH
Datasheet (PDF)
..1. Size:1287K magnachip
mmd70r600prh.pdf 
MMD70R600P Datasheet MMD70R600P 700V 0.6 N-channel MOSFET Description MMD70R600P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
..2. Size:309K inchange semiconductor
mmd70r600prh.pdf
isc N-Channel MOSFET Transistor MMD70R600PRHFEATURESDrain Current : I = 7.3A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.1. Size:1211K magnachip
mmd70r1k4prh.pdf
MMD70R1K4P Datasheet MMD70R1K4P 700V 1.4 N-channel MOSFET Description MMD70R1K4P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
8.2. Size:1206K magnachip
mmd70r900p.pdf
MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
8.3. Size:1154K magnachip
mmd70r900prh.pdf
MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
8.4. Size:1279K magnachip
mmd70r750prh.pdf
MMD70R750P Datasheet MMD70R750P 700V 0.75 N-channel MOSFET Description MMD70R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
8.5. Size:310K inchange semiconductor
mmd70r1k4prh.pdf
isc N-Channel MOSFET Transistor MMD70R1K4PRHFEATURESDrain Current : I = 3.2A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.4(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.6. Size:309K inchange semiconductor
mmd70r900prh.pdf
isc N-Channel MOSFET Transistor MMD70R900PRHFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
8.7. Size:309K inchange semiconductor
mmd70r750prh.pdf
isc N-Channel MOSFET Transistor MMD70R750PRHFEATURESDrain Current : I = 5.8A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
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