All MOSFET. MMIX1F230N20T Datasheet

 

MMIX1F230N20T Datasheet and Replacement


   Type Designator: MMIX1F230N20T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 680 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 168 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 2540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: ISOLATED TAB
 

 MMIX1F230N20T substitution

   - MOSFET ⓘ Cross-Reference Search

 

MMIX1F230N20T Datasheet (PDF)

 ..1. Size:180K  ixys
mmix1f230n20t.pdf pdf_icon

MMIX1F230N20T

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 200VMMIX1F230N20THiperFETTMID25 = 168A Power MOSFET RDS(on) 8.3m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C 200 V

 7.1. Size:181K  ixys
mmix1f210n30p3.pdf pdf_icon

MMIX1F230N20T

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VMMIX1F210N30P3Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab)trr 250nsN-Channel Enhancement ModeDAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 V Isolated TabVDGR TJ

 8.1. Size:225K  ixys
mmix1f420n10t.pdf pdf_icon

MMIX1F230N20T

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab

 8.2. Size:233K  ixys
mmix1f360n15t2.pdf pdf_icon

MMIX1F230N20T

Preliminary Technical InformationTrenchT2TM GigaMOSTMVDSS = 150VMMIX1F360N15T2HiperFETTMID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C

Datasheet: MMIS60R900PTH , MMIS70H900QTH , MMIS70R1K4PTH , MMIS70R900PTH , MMIX1F132N50P3 , MMIX1F160N30T , MMIX1F180N25T , MMIX1F210N30P3 , IRF3710 , MMIX1F360N15T2 , MMIX1F40N110P , MMIX1F420N10T , MMIX1F44N100Q3 , MML60R190PTH , MML60R290PTH , MML65R190PTH , MMN2302 .

History: BRD7N65 | 2SK578 | FQB46N15TMAM002 | NCE70N900I | GSM6424 | TPCA8008-H | CS5N65A3

Keywords - MMIX1F230N20T MOSFET datasheet

 MMIX1F230N20T cross reference
 MMIX1F230N20T equivalent finder
 MMIX1F230N20T lookup
 MMIX1F230N20T substitution
 MMIX1F230N20T replacement

 

 
Back to Top

 


 
.