MMIX1F230N20T MOSFET. Datasheet pdf. Equivalent
Type Designator: MMIX1F230N20T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 680 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 168 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 378 nC
Rise Time (tr): 35 nS
Drain-Source Capacitance (Cd): 2540 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0083 Ohm
Package: Isolated_Tab
MMIX1F230N20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMIX1F230N20T Datasheet (PDF)
1.1. mmix1f230n20t.pdf 
Size:180K _update_mosfet
Advance Technical Information GigaMOSTM TrenchTM VDSS = 200V MMIX1F230N20T HiperFETTM ID25 = 168A ≤ Ω Power MOSFET RDS(on) ≤ 8.3mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 175°C 200 V
3.1. mmix1f210n30p3.pdf Size:181K _update_mosfet
Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V MMIX1F210N30P3 Power MOSFET ID25 = 108A ≤ Ω RDS(on) ≤ 16mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode D Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V Isolated Tab VDGR TJ
4.1. mmix1f132n50p3.pdf Size:182K _update_mosfet
Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A ≤ Ω RDS(on) ≤ 43mΩ ≤ Ω ≤ Ω ≤ Ω ≤ (Electrically Isolated Tab) trr ≤ 250ns ≤ ≤ ≤ D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V Isolated Tab VDGR TJ =
4.2. mmix1f40n110p.pdf Size:177K _update_mosfet
Advance Technical Information PolarTM HiperFETTM VDSS = 1100V MMIX1F40N110P Power MOSFET ID25 = 24A ≤ Ω RDS(on) ≤ 290mΩ ≤ Ω ≤ Ω ≤ Ω (Electrically Isolated Tab) ≤ trr ≤ 300ns ≤ ≤ ≤ D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V Isolated Tab VDGR TJ
4.3. mmix1f420n10t.pdf Size:225K _update_mosfet
Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A ≤ Ω Power MOSFET RDS(on) ≤ 2.6mΩ ≤ Ω ≤ Ω ≤ Ω ≤ Trr ≤ 140ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V Isolated Tab
4.4. mmix1f160n30t.pdf Size:183K _update_mosfet
Advance Technical Information GigaMOSTM TrenchTM VDSS = 300V MMIX1F160N30T HiperFETTM ID25 = 102A ≤ Ω Power MOSFET RDS(on) ≤ 20mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 150°C 300 V V
4.5. mmix1f44n100q3.pdf Size:176K _update_mosfet
Advance Technical Information HiperFETTM VDSS = 1000V MMIX1F44N100Q3 Power MOSFET ID25 = 30A ≤ Ω Q3-Class RDS(on) ≤ 245mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 300ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V Isolated Tab VDGR TJ = 25°C to 150
4.6. mmix1f180n25t.pdf Size:183K _update_mosfet
Advance Technical Information GigaMOSTM TrenchTM VDSS = 250V MMIX1F180N25T HiperFETTM ID25 = 130A ≤ Ω Power MOSFET RDS(on) ≤ 13mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 150°C 250 V V
4.7. mmix1f360n15t2.pdf Size:233K _update_mosfet
Preliminary Technical Information TrenchT2TM GigaMOSTM VDSS = 150V MMIX1F360N15T2 HiperFETTM ID25 = 235A ≤ Ω Power MOSFET RDS(on) ≤ 4.4mΩ ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 150ns ≤ ≤ ≤ (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25°C to 175°C
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