MMIX1F360N15T2 Specs and Replacement

Type Designator: MMIX1F360N15T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 680 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 235 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 3060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: ISOLATED TAB

MMIX1F360N15T2 substitution

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MMIX1F360N15T2 datasheet

 ..1. Size:233K  ixys
 mmix1f360n15t2.pdf pdf_icon

MMIX1F360N15T2

Preliminary Technical Information TrenchT2TM GigaMOSTM VDSS = 150V MMIX1F360N15T2 HiperFETTM ID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 175 C ... See More ⇒

 8.1. Size:225K  ixys
 mmix1f420n10t.pdf pdf_icon

MMIX1F360N15T2

Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V Isolated Tab ... See More ⇒

 8.2. Size:182K  ixys
 mmix1f132n50p3.pdf pdf_icon

MMIX1F360N15T2

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250ns D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V Isolated Tab VDGR TJ = ... See More ⇒

 8.3. Size:183K  ixys
 mmix1f180n25t.pdf pdf_icon

MMIX1F360N15T2

Advance Technical Information GigaMOSTM TrenchTM VDSS = 250V MMIX1F180N25T HiperFETTM ID25 = 130A Power MOSFET RDS(on) 13m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 250 V V... See More ⇒

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Detailed specifications: MMIS70H900QTH, MMIS70R1K4PTH, MMIS70R900PTH, MMIX1F132N50P3, MMIX1F160N30T, MMIX1F180N25T, MMIX1F210N30P3, MMIX1F230N20T, IRFB4227, MMIX1F40N110P, MMIX1F420N10T, MMIX1F44N100Q3, MML60R190PTH, MML60R290PTH, MML65R190PTH, MMN2302, MMN2312

Keywords - MMIX1F360N15T2 MOSFET specs

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