MMIX1F360N15T2 MOSFET. Datasheet pdf. Equivalent
Type Designator: MMIX1F360N15T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 680 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 235 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 715 nC
trⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 3060 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: ISOLATED TAB
MMIX1F360N15T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMIX1F360N15T2 Datasheet (PDF)
mmix1f360n15t2.pdf
Preliminary Technical InformationTrenchT2TM GigaMOSTMVDSS = 150VMMIX1F360N15T2HiperFETTMID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C
mmix1f420n10t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab
mmix1f132n50p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 500VMMIX1F132N50P3Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250nsDN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V Isolated TabVDGR TJ =
mmix1f180n25t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 250VMMIX1F180N25THiperFETTMID25 = 130A Power MOSFET RDS(on) 13m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 250 VV
mmix1f210n30p3.pdf
Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VMMIX1F210N30P3Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab)trr 250nsN-Channel Enhancement ModeDAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 V Isolated TabVDGR TJ
mmix1f44n100q3.pdf
Advance Technical InformationHiperFETTM VDSS = 1000VMMIX1F44N100Q3Power MOSFET ID25 = 30A Q3-Class RDS(on) 245m trr 300ns(Electrically Isolated Tab)DN-Channel Enhancement ModeFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 V Isolated TabVDGR TJ = 25C to 150
mmix1f230n20t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 200VMMIX1F230N20THiperFETTMID25 = 168A Power MOSFET RDS(on) 8.3m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C 200 V
mmix1f160n30t.pdf
Advance Technical InformationGigaMOSTM TrenchTMVDSS = 300VMMIX1F160N30THiperFETTMID25 = 102A Power MOSFET RDS(on) 20m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 300 VV
mmix1f40n110p.pdf
Advance Technical InformationPolarTM HiperFETTM VDSS = 1100VMMIX1F40N110PPower MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab)trr 300nsDN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1100 V Isolated TabVDGR TJ
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PSMN3R7-100BSE
History: PSMN3R7-100BSE
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