All MOSFET. MMIX1F40N110P Datasheet

 

MMIX1F40N110P Datasheet and Replacement


   Type Designator: MMIX1F40N110P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1070 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: ISOLATED TAB
 

 MMIX1F40N110P substitution

   - MOSFET ⓘ Cross-Reference Search

 

MMIX1F40N110P Datasheet (PDF)

 ..1. Size:177K  ixys
 mmix1f40n110p.pdf pdf_icon

MMIX1F40N110P

Advance Technical InformationPolarTM HiperFETTM VDSS = 1100VMMIX1F40N110PPower MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab)trr 300nsDN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1100 V Isolated TabVDGR TJ

 7.1. Size:225K  ixys
 mmix1f420n10t.pdf pdf_icon

MMIX1F40N110P

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab

 7.2. Size:176K  ixys
 mmix1f44n100q3.pdf pdf_icon

MMIX1F40N110P

Advance Technical InformationHiperFETTM VDSS = 1000VMMIX1F44N100Q3Power MOSFET ID25 = 30A Q3-Class RDS(on) 245m trr 300ns(Electrically Isolated Tab)DN-Channel Enhancement ModeFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 V Isolated TabVDGR TJ = 25C to 150

 8.1. Size:233K  ixys
 mmix1f360n15t2.pdf pdf_icon

MMIX1F40N110P

Preliminary Technical InformationTrenchT2TM GigaMOSTMVDSS = 150VMMIX1F360N15T2HiperFETTMID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C

SHOW MORE

Datasheet: MMIS70R1K4PTH , MMIS70R900PTH , MMIX1F132N50P3 , MMIX1F160N30T , MMIX1F180N25T , MMIX1F210N30P3 , MMIX1F230N20T , MMIX1F360N15T2 , P55NF06 , MMIX1F420N10T , MMIX1F44N100Q3 , MML60R190PTH , MML60R290PTH , MML65R190PTH , MMN2302 , MMN2312 , MMN25N03 .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - MMIX1F40N110P MOSFET datasheet

 MMIX1F40N110P cross reference
 MMIX1F40N110P equivalent finder
 MMIX1F40N110P lookup
 MMIX1F40N110P substitution
 MMIX1F40N110P replacement

 

 
Back to Top

 


 
.