MMN4326 Specs and Replacement

Type Designator: MMN4326

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.25 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: SOP-8

MMN4326 substitution

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MMN4326 datasheet

 ..1. Size:292K  m-mos
 mmn4326.pdf pdf_icon

MMN4326

MMN4326 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@8.5A = 41m RDS(ON), Vgs@4.5V, Ids@8.5A = 45m RDS(ON), Vgs@2.5V, Ids@5.0A = 59m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain Gate Source Top View... See More ⇒

 9.1. Size:185K  m-mos
 mmn4364dy.pdf pdf_icon

MMN4326

MMN4364DY Preliminary Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@20A = 5.5m RDS(ON), Vgs@4.5V, Ids@19A = 6.5m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current SO-8 Internal Schematic Diagram Drain Gate ... See More ⇒

 9.2. Size:218K  m-mos
 mmn4338.pdf pdf_icon

MMN4326

MMN4338 Preliminary Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@4.9A = 42m RDS(ON), Vgs@4.5V, Ids@4.1A = 65m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Drain Gate Source Top View N-Channel MOSFET Maximum... See More ⇒

 9.3. Size:201K  m-mos
 mmn4336.pdf pdf_icon

MMN4326

MMN4336 Data Sheet M-MOS Semiconductor Hong Kong Limited 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@25A = 3.6m RDS(ON), Vgs@4.5V, Ids@22A = 4.8m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current SOP-08 Internal Schematic Diagram Drain Gate Source Top... See More ⇒

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Detailed specifications: MMN2312, MMN25N03, MMN3205, MMN3220, MMN3400, MMN35N03, MMN404, MMN4307, IRF9540N, MMN4336, MMN4338, MMN4364DY, MMN4410, MMN4414, MMN4418, MMN4422, MMN4430

Keywords - MMN4326 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs