All MOSFET. MMN4338 Datasheet

 

MMN4338 Datasheet and Replacement


   Type Designator: MMN4338
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.13 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.83 nS
   Cossⓘ - Output Capacitance: 33.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOP-8
 

 MMN4338 substitution

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MMN4338 Datasheet (PDF)

 ..1. Size:218K  m-mos
 mmn4338.pdf pdf_icon

MMN4338

MMN4338Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@4.9A = 42mRDS(ON), Vgs@4.5V, Ids@4.1A = 65mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum

 8.1. Size:201K  m-mos
 mmn4336.pdf pdf_icon

MMN4338

MMN4336Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@25A = 3.6mRDS(ON), Vgs@4.5V, Ids@22A = 4.8mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSOP-08 Internal Schematic DiagramDrain Gate Source Top

 9.1. Size:185K  m-mos
 mmn4364dy.pdf pdf_icon

MMN4338

MMN4364DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@19A = 6.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate

 9.2. Size:292K  m-mos
 mmn4326.pdf pdf_icon

MMN4338

MMN4326Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 41mRDS(ON), Vgs@4.5V, Ids@8.5A = 45mRDS(ON), Vgs@2.5V, Ids@5.0A = 59mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View

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Datasheet: MMN3205 , MMN3220 , MMN3400 , MMN35N03 , MMN404 , MMN4307 , MMN4326 , MMN4336 , IRLB4132 , MMN4364DY , MMN4410 , MMN4414 , MMN4418 , MMN4422 , MMN4430 , MMN4444 , MMN4446 .

Keywords - MMN4338 MOSFET datasheet

 MMN4338 cross reference
 MMN4338 equivalent finder
 MMN4338 lookup
 MMN4338 substitution
 MMN4338 replacement

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