MMN8220 MOSFET. Datasheet pdf. Equivalent
Type Designator: MMN8220
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.26 nC
trⓘ - Rise Time: 5.242 nS
Cossⓘ - Output Capacitance: 51.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TSSOP-8
MMN8220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMN8220 Datasheet (PDF)
mmn8220.pdf
MMN8220Package Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@1.8V, Ids@2A = 50mRDS(ON), Vgs@2.5V, Ids@5.5A = 40mRDS(ON), Vgs@4.5V, Ids@6.6A = 30mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceIdeal for Li ion battery pack applicationsTSSOP-08 Internal Schema
mmn8218.pdf
MMN8218Package Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@1.8V, Ids@2.0A = 68mRDS(ON), Vgs@2.5V, Ids@3.5A = 38mRDS(ON), Vgs@4.0V, Ids@4.5A = 30mRDS(ON), Vgs@4.5V, Ids@4.5A = 28mRDS(ON), Vgs@10V, Ids@6.0A = 25mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Res
mmn8205.pdf
MMN8205Package Data SheetM-MOS Semiconductor Hong Kong Limited20V N-Channel Enhancement-Mode MOSFETVDS= 20VRDS(ON), Vgs@2.5V, Ids@4.0A = 38mRDS(ON), Vgs@4.0V, Ids@5.0A = 30mRDS(ON), Vgs@4.5V, Ids@5.0A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capabilityIdeal for Li ion batter
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 2SJ548
History: 2SJ548
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918