All MOSFET. MMP4415A Datasheet

 

MMP4415A Datasheet and Replacement


   Type Designator: MMP4415A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.36 nS
   Cossⓘ - Output Capacitance: 229.65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP-8
 

 MMP4415A substitution

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MMP4415A Datasheet (PDF)

 ..1. Size:205K  m-mos
 mmp4415a.pdf pdf_icon

MMP4415A

MMP4415AData SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unl

 8.1. Size:154K  m-mos
 mmp4411.pdf pdf_icon

MMP4415A

MMP4411Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 32mRDS(ON), Vgs@-4.5V, Ids@-5A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25

 8.2. Size:150K  m-mos
 mmp4411dy.pdf pdf_icon

MMP4415A

MMP4411DYData SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-13.0A = 10mRDS(ON), Vgs@-4.5V, Ids@-10.0A = 15.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristic

 9.1. Size:164K  m-mos
 mmp4407.pdf pdf_icon

MMP4415A

MMP4407Data SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-10A = 20mRDS(ON), Vgs@-4.5V, Ids@-7A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and

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Datasheet: MMP3443 , MMP4353 , MMP4357 , MMP4383 , MMP4399 , MMP4407 , MMP4411 , MMP4411DY , IRF730 , MMP4425 , MMP4425DY , MMP4435BDY , MMP60R190PTH , MMP60R195PCTH , MMP60R290PCTH , MMP60R290PTH , MMP60R360PTH .

History: 2SK1172-01 | 9N90L-T3N-T | IRLU4343 | 2SK3579-01MR | BRF60R580C | DH012N03B | NVATS5A304PLZ

Keywords - MMP4415A MOSFET datasheet

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