All MOSFET. MMP60R195PCTH Datasheet

 

MMP60R195PCTH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMP60R195PCTH
   Marking Code: 60R195PC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 154 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 999 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: TO-220

 MMP60R195PCTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMP60R195PCTH Datasheet (PDF)

 ..1. Size:1060K  magnachip
mmp60r195pcth.pdf

MMP60R195PCTH
MMP60R195PCTH

MMP60R195PC Datasheet MMP60R195PC 600V 0.195 N-channel MOSFET Description MMP60R195PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 6.1. Size:1205K  magnachip
mmp60r190pth.pdf

MMP60R195PCTH
MMP60R195PCTH

MMP60R190P Datasheet MMP60R190P 600V 0.19 N-channel MOSFET Description MMP60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 6.2. Size:254K  inchange semiconductor
mmp60r190pth.pdf

MMP60R195PCTH
MMP60R195PCTH

isc N-Channel MOSFET Transistor MMP60R190PTHFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.1. Size:1241K  magnachip
mmp60r750pth.pdf

MMP60R195PCTH
MMP60R195PCTH

MMP60R750P Datasheet MMP60R750P 600V 0.75 N-channel MOSFET Description MMP60R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.2. Size:1033K  magnachip
mmp60r290pcth.pdf

MMP60R195PCTH
MMP60R195PCTH

MMP60R290PC Datasheet MMP60R290PC 600V 0.29 N-channel MOSFET Description MMP60R290PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 8.3. Size:1547K  magnachip
mmp60r290pth.pdf

MMP60R195PCTH
MMP60R195PCTH

MMP60R290P Datasheet MMP60R290P 600V 0.29 N-channel MOSFET Description MMP60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.4. Size:1171K  magnachip
mmp60r580pth.pdf

MMP60R195PCTH
MMP60R195PCTH

MMP60R580P Datasheet MMP60R580P 600V 0.58 N-channel MOSFET Description MMP60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.5. Size:1271K  magnachip
mmp60r360pth.pdf

MMP60R195PCTH
MMP60R195PCTH

MMP60R360P Datasheet MMP60R360P 600V 0.36 N-channel MOSFET Description MMP60R360P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BLF871

 

 
Back to Top