MMQ60R115PCTH MOSFET. Datasheet pdf. Equivalent
Type Designator: MMQ60R115PCTH
Marking Code: 60R115PC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 33 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 77 nC
trⓘ - Rise Time: 114 nS
Cossⓘ - Output Capacitance: 1770 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: TO-247
MMQ60R115PCTH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMQ60R115PCTH Datasheet (PDF)
mmq60r115pcth.pdf
MMQ60R115PC Datasheet MMQ60R115PC 600V 0.115 N-channel MOSFET Description MMQ60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmq60r115pth.pdf
MMQ60R115P Datasheet MMQ60R115P 600V 0.115 N-channel MOSFET Description MMQ60R115P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmq60r190pth.pdf
MMQ60R190P Datasheet MMQ60R190P 600V 0.19 N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmq60r070pth.pdf
MMQ60R070P Datasheet MMQ60R070P 600V 0.07 N-channel MOSFET Description MMQ60R070P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXFH86N30T
History: IXFH86N30T
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